Welcome!
Main products: SiC Ingot Manufacturer ,As cut SiC Wafer Manufacturer,GaN on SiC Epi Wafer Manufacturer,GaN on Si Epi Wafer Manufacturer,SiC on SiC Epi Wafer Manufacturer,SiC Substrate Wafer Supplier,GaN on Sapphire Substrate Wafer Supplier,SiC Crystal Manufacturer,GaN Substrate Supplier
SiC Boule Manufacturer 6 inch N type SiC Boule
The HMT company specializes in the production and global supply of high-quality single crystalline SiC Boule. We offer competitive prices for our 6-inch 4H-N SiC Boule (test grade) and 4-inch 4H-SI SiC Crystal ingot (D grade). Our customers have the opportunity to purchase SiC Boule specifically designed for laser cutting equipment testing.
SiC material has wide band gap, high breakdown electric field, high thermal conductivity, high electron mobility and radiation resistance, SiC based SBD and MOSFETs are more suitable for high frequency, high temperature, high pressure, high power and radiation resistance environment. With the same power level, the SiC device can meet the requirements of higher power density and more compact design.
SiC has a higher power density than traditional silicon wafers, making the size and volume of devices smaller and the corresponding battery size smaller, thus extending battery life and giving electric cars longer range. Tesla's Model 3, for example, uses SiC instead of silicon for its current conversion module.
Contact Us
Homray Material Technology